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Vanguard Semiconductor

VS3400BC Datasheet Preview

VS3400BC Datasheet

N-Channel Advanced Power MOSFET

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Features
Ron(typ.)=30 m@VGS=4.5V
Low On-Resistance
150°C Operating Temperature
Fast Switching
Lead-Free, RoHS Compliant
VS3400BC
30V/5.8A N-Channel Advanced Power MOSFET
Description
VS3400BC designed by the trench processing
techniques to achieve extremely low on-resistance.
And fast switching speed and improved transfer
effective . These features combine to make this
design an extremely efficient and reliable device for
variety of DC-DC applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VGS Gate-Source Voltage
V(BR)DSS
TJ
TSTG
IS
Drain-Source Breakdown Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
TA =25°C
±12
30
150
-50 to 150
1
V
V
°C
°C
A
Mounted on Large Heat Sink
IDM Pulse Drain Current Tested
ID Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RJA Thermal Resistance Junction-Ambient
TA =25°C
TA =25°C
TA =100°C
TA =25°C
20
5.8
3.6
1.20
105
A
A
W
°C/W
CopyrightVanguard Semiconductor Co., Ltd
Rev. 2.0– Aug.28th, 2014
Page 1 Total 5
www.vgsemi.com




Vanguard Semiconductor

VS3400BC Datasheet Preview

VS3400BC Datasheet

N-Channel Advanced Power MOSFET

No Preview Available !

VS3400BC
30V/5.8A N-Channel Advanced Power MOSFET
Symbol Parameter
Condition
Min Typ Max Unit
Static Electrical Characteristics @ TA = 25°C (unless otherwise stated)
V(BR)DSS Drain-Source Breakdown Voltage
VGS=0V ID=250μA 30 -- -- V
Zero Gate Voltage Drain Current(Tj=25) VDS=30V,VGS=0V -- -- 1 μA
IDSS
Zero Gate Voltage Drain Current(Tj=125) VDS=30V,VGS=0V -- -- 100 μA
IGSS Gate-Body Leakage Current
VGS=±12V,VDS=0V
--
--
VGS(TH)
Gate Threshold Voltage
VDS=VGS,ID=250μA 0.60 0.85
RDS(ON)
Drain-Source On-State Resistance
VGS=4.5V, ID=5.8A -- 27
RDS(ON)
Drain-Source On-State Resistance
VGS=3.3V, ID=4.5A -- 29
RDS(ON)
Drain-Source On-State Resistance
VGS=2.5V, ID=4.5A -- 35
Dynamic Electrical Characteristics @ TA = 25°C (unless otherwise stated)
Ciss
Coss
Crss
Qg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Switching Characteristics
VDS=15V,VGS=0V,
f=1MHz
VDS=15V,ID=5.8A,
VGS=4.5V
-- 635
-- 135
-- 40
-- 10.5
-- 1.6
-- 2.7
t d(on)
Turn-on Delay Time
tr Turn-on Rise Time
t d(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Source- Drain Diode Characteristics
VDD=15V,
ID=2.8A,
RG=3.3,
VGS=4.5V
-- 7.2
-- 15
-- 36
-- 3
±100
1.20
35
38
45
--
--
--
--
--
--
--
--
--
--
nA
V
m
m
m
pF
pF
pF
nC
nC
nC
nS
nS
nS
nS
VSD Forward on voltage
trr Reverse Recovery Time
Qrr
NOTE:
Reverse Recovery Charge
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 300μs; duty cycle2%.
ISD=3A,VGS=0V
Tj=25,Isd=3A,
VGS=0V
di/dt=100A/μs
-- 0.81 1.20 V
-- 8.1 -- nS
3.4 nC
CopyrightVanguard Semiconductor Co., Ltd
Rev. 2.0– Aug.28th, 2014
Page 2 Total 5
www.vgsemi.com


Part Number VS3400BC
Description N-Channel Advanced Power MOSFET
Maker Vanguard Semiconductor
Total Page 5 Pages
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