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Vanguard Semiconductor

VS6610GI Datasheet Preview

VS6610GI Datasheet

N-Channel Advanced Power MOSFET

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Features
Enhancement mode
Low on-resistance RDS(on) @ VGS=4.5 V
VitoMOS® Technology
100% Avalanche test
Pb-free lead plating; RoHS compliant
VS6610GI
60V/60A N-Channel Advanced Power MOSFET
V DS
R @ DS(on),TYP VGS=10 V
R @ DS(on),TYP VGS=4.5 V
ID
60
V
7.5 mΩ
12.5 mΩ
60
A
TO-251
Part ID
VS6610GI
Package Type
TO-251
Marking
6610GI
Tape and reel
information
75pcs/Tube
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
VGS
Drain-Source breakdown voltage
Gate-Source voltage
IS
Diode continuous forward current
ID
Continuous drain current @VGS=10V
IDM
Pulse drain current tested
TC =25°C
TC =25°C
TC =100°C
TC =25°C
IDSM
Continuous drain current @VGS=10V
TA=25°C
TA=70°C
EAS
Avalanche energy, single pulsed
PD
Maximum power dissipation
TC =25°C
TC =100°C
PDSM
Maximum power dissipation
TSTG , TJ
Storage and Junction Temperature Range
Thermal Characteristics
TA=25°C
TA=70°C
Symbol
Parameter
Rθ JC
Thermal Resistance, Junction-to-Case
Rθ JA
Thermal Resistance, Junction-to-Ambient
Rating
60
±20
60
60
42
240
9
7
25
52
26
1.25
0.8
-55 to 175
Typical
2.9
100
Unit
V
V
A
A
A
A
A
A
mJ
W
W
W
W
°C
Unit
°C/W
°C/W
Copyright© Vanguard Semiconductor Co., Ltd
Rev A – JUL, 2019
www.vgsemi.com




Vanguard Semiconductor

VS6610GI Datasheet Preview

VS6610GI Datasheet

N-Channel Advanced Power MOSFET

No Preview Available !

Electrical Characteristics
VS6610GI
60V/60A N-Channel Advanced Power MOSFET
Symbol
Parameter
Condition
Min. Typ. Max. Unit
Static Electrical Characteristics @ Tj=25°C (unless otherwise stated)
V(BR)DSS Drain-Source Breakdown Voltage
VGS=0V, ID=250μA
60
--
--
V
Zero Gate Voltage Drain Current
VDS=60V,VGS=0V
--
--
1
μA
IDSS
Zero Gate Voltage Drain Current( Tj =125) VDS=60V,VGS=0V
--
--
100
μA
IGSS
Gate-Body Leakage Current
VGS=±20V,VDS=0V
--
--
±100
nA
VGS(TH)
Gate Threshold Voltage
VDS=VGS,ID=250μA 1.5
1.8
2.4
V
RDS(ON)
Drain-Source On-State Resistance
RDS(ON)
Drain-Source On-State Resistance
VGS=10V, ID=20A
--
7.5
10
Tj =100
--
10
--
VGS=4.5V, ID=20A
--
12.5
17
Dynamic Electrical Characteristics @ Tj = 25°C (unless otherwise stated)
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
Qg (10V) Total Gate Charge
Qg (4.5V) Total Gate Charge
Q gs
Gate-Source Charge
Q gd
Gate-Drain Charge
Switching Characteristics
970 1140 1310
pF
VDS=30V,VGS=0V,
550
645
740
pF
f=1MHz
--
20
30
pF
f=1MHz
--
0.9
--
Ω
--
20
--
nC
VDS=30V,ID=20A,
--
10
--
nC
VGS=10V
--
4
--
nC
--
3.9
--
nC
t d(on)
Turn-on Delay Time
VDD=30V,
--
8.4
--
ns
tr
t d(off)
tf
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
ID=20A,
RG=3Ω,
VGS=10V
--
34
--
ns
--
19
--
ns
--
5.6
--
ns
Source- Drain Diode Characteristics@ Tj = 25°C (unless otherwise stated)
VSD
t rr
Q rr
NOTE:
Forward on voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=20A,VGS=0V
Tj=25,Isd=20A,
VGS=0V
di/dt=100A/μs
--
0.9
1.2
V
--
26
--
ns
--
14
--
nC
Repetitive rating; pulse width limited by max junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.5mH,RG = 25Ω, IAS = 10A, VGS =10V. Part not recommended for use above this value
The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C.
Pulse width ≤ 380μs; duty cycle≤ 2%.
Copyright© Vanguard Semiconductor Co., Ltd
Rev A – JUL, 2019
www.vgsemi.com


Part Number VS6610GI
Description N-Channel Advanced Power MOSFET
Maker Vanguard Semiconductor
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VS6610GI Datasheet PDF






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