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IRF830A Key Features

  • Low gate charge Qg results in simple drive requirement
  • Improved gate, avalanche and dynamic dV/dt
  • Fully characterized capacitance and avalanche voltage and current
  • Effective Coss specified
  • Material categorization: for definitions of pliance
  • This datasheet provides information about parts that are

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IRF830A Description

IRF830A Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 1.4 24 6.3 11 Single ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free.