IRF830A Datasheet PDF

The IRF830A is a Power MOSFET.

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Part NumberIRF830A Datasheet
ManufacturerVishay
Overview IRF830A Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 1.4.
* Low gate charge Qg results in simple drive requirement Available
* Improved gate, avalanche and dynamic dV/dt ruggedness Available
* Fully characterized capacitance and avalanche voltage and current
* Effective Coss specified
* Material categorization: for definitions of compliance please s.
Part NumberIRF830A Datasheet
DescriptionN-Channel Power MOSFET
ManufacturerNell Power Semiconductor
Overview The Nell IRF830 are N-Channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanch. RDS(ON) = 1.5Ω @ VGS = 10V Ultra low gate charge(38nC Max.) Low reverse transfer capacitance (CRSS = 68pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (IRF830A) D (Drain) G (Gate) S (Source) PRODUCT.
Part NumberIRF830A Datasheet
DescriptionPower MOSFET
ManufacturerInternational Rectifier
Overview SMPS MOSFET PD- 91878D IRF830A Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching HEXFET® Power MOSFET VDSS 500V Rds(on) max ID 1.40Ω 5. .
Part NumberIRF830A Datasheet
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc N-Channel Mosfet Transistor INCHANGE Semiconductor IRF830A FEATURES ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Low Drive Requirement ·Minimum L.
*Drain Current
*ID=5A@ TC=25℃
*Drain Source Voltage- : VDSS= 500V(Min)
*Fast Switching Speed
*Low Drive Requirement
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Switch Mode Power Supply
*Uninterruptable Power Supply
*High speed power switching A.