power mosfet.
* Dynamic dV/dt rating
* 175 °C operating temperature
Available
* Fast switching
Available
* Ease of paralleling
* Simple drive requirements
at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contr.
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universially preferred for commercial-industrial .
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