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IRLI540G Datasheet Power MOSFET

Manufacturer: Vishay

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General Description

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.

The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink.

Overview

www.vishay.com IRLI540G Vishay Siliconix Power MOSFET D TO-220 FULLPAK G S GD S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 5 V 64 9.4 27 Single 0.

Key Features

  • Isolated package.
  • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz).
  • Sink to lead creepage distance = 4.8 mm.
  • Logic-level gate drive.
  • RDS (on) specified at VGS = 4 V and 5 V.
  • Fast switching.
  • Ease of paralleling.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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