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IRLI540G Key Features

  • Isolated package
  • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
  • Sink to lead creepage distance = 4.8 mm
  • Logic-level gate drive
  • RDS (on) specified at VGS = 4 V and 5 V
  • Fast switching
  • Ease of paralleling
  • Material categorization: for definitions of pliance please see .vishay./doc?99912

Other IRLI540G Datasheets

Manufacturer Part Number Description
International Rectifier Logo International Rectifier IRLI540G HEXFET Power MOSFET
Fairchild Semiconductor Logo Fairchild IRLI540A Power MOSFET
International Rectifier Logo International Rectifier IRLI540N HEXFET Power MOSFET
International Rectifier Logo International Rectifier IRLI540NPBF HEXFET Power MOSFET
Infineon Logo Infineon IRLI540NPbF Power MOSFET

View all IRLI540G datasheets →

IRLI540G Description

Third generation power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in mercial-industrial applications. The molding pound used provides a high isolation capability and a low between the tab and external heatsink.