* TrenchFET® Power MOSFET
* ESD Protected: 550 V Typical HBM
* Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 BENEFITS
* Low Offset Voltage
* Low-Voltage Operation
* High-Speed Circuits
* Small Board
SI1028X
175.15 KB
Dual n-channel mosfet.
Dual N-Channel 30 V (D-S) MOSFET Si1028X Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Max. 0.650 at VGS = 10 V 30 0.770 at VGS = 4.5 V I.
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