* TrenchFET® power MOSFET
* Ultra small 0.8 mm x 0.8 mm outline
* Ultra thin 0.4 mm max. height
* Typical ESD protection 1700 V (HBM)
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
* Load swit
SI8816EDB Datasheet (149.59 KB)
SI8816EDB
149.59 KB
N-channel mosfet.
www.vishay.com Si8816EDB Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Max. 0.109 at VGS = 10 V 30 0.116 at .
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