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SI8816EDB - N-Channel MOSFET

Features

  • TrenchFET® power MOSFET.
  • Ultra small 0.8 mm x 0.8 mm outline.
  • Ultra thin 0.4 mm max. height.
  • Typical ESD protection 1700 V (HBM).
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SI8816EDB
Manufacturer Vishay
File Size 149.59 KB
Description N-Channel MOSFET
Datasheet download datasheet SI8816EDB Datasheet

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Full PDF Text Transcription

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www.vishay.com Si8816EDB Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Max. 0.109 at VGS = 10 V 30 0.116 at VGS = 4.5 V 0.123 at VGS = 3.7 V 0.142 at VGS = 2.5 V ID (A) a 2.3 2.3 2.2 2.0 Qg (Typ.) 2.4 nC MICRO FOOT® 0.8 x 0.8 S S2 xxxxx 3 1 0.8 mm 1 4G D Backside View Bump Side View 0.8 mm Marking Code: xx = AH xxx = Date/Lot traceability code Ordering Information: Si8816EDB-T2-E1 (lead (Pb)-free and halogen-free) FEATURES • TrenchFET® power MOSFET • Ultra small 0.8 mm x 0.8 mm outline • Ultra thin 0.4 mm max. height • Typical ESD protection 1700 V (HBM) • Material categorization: for definitions of compliance please see www.vishay.
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