Si8817DB - P-Channel 20V (D-S) MOSFET

Vishay

Key Features

TrenchFET® power MOSFET.
Small 0.8 mm x 0.8 mm outline area.
Low 0.4 mm max. profile.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Si8817DB p-channel 20v (d-s) mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	Si8817DB
Manufacturer	Vishay
File Size	154.15 KB
Description	P-Channel 20V (D-S) MOSFET
Datasheet	Si8817DB Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
SI8810	N-Channel MOSFET	MCC
Si8800EDB	N-Channel 20 V (D-S) MOSFET	Vishay Siliconix
SI8822	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor	Kexin
Si88220	DUAL DIGITAL ISOLATORS	Silicon Laboratories
Si88221	DUAL DIGITAL ISOLATORS	Silicon Laboratories

Other Datasheets by Vishay

Part Number	Description
Si8810EDB	N-Channel MOSFET
Si8812DB	N-Channel MOSFET
SI8816EDB	N-Channel MOSFET
Si8802DB	N-Channel MOSFET
Si8823EDB	P-Channel 20 V (D-S) MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

www.vishay.com Si8817DB Vishay Siliconix P-Channel 20 V (D-S) MOSFET MICRO FOOT® 0.8 x 0.8 S S2 xxxxx 3 0.8 mm 1 0.8 mm Backside View 1 4G D Bump Side View Marking code: AF PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -4.5 V RDS(on) max. () at VGS = -2.5 V RDS(on) max. () at VGS = -1.8 V RDS(on) max. () at VGS = -1.5 V Qg typ. (nC) ID (A) a, e Configuration -20 0.076 0.100 0.145 0.320 7.5 -2.9 Single FEATURES • TrenchFET® power MOSFET • Small 0.8 mm x 0.8 mm outline area • Low 0.4 mm max. profile • Material categorization: for definitions of compliance please see www.vishay.