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Si8810EDB
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) RDS(on) () Max. 0.072 at VGS = 4.5 V 20 0.079 at VGS = 2.5 V 0.092 at VGS = 1.8 V 0.125 at VGS = 1.5 V
MICRO FOOT
Bump Side View Backside View
ID (A)a 2.9 2.8 2.6 2.2
Qg (Typ.)
3 nC
• • • • •
TrenchFET® Power MOSFET Ultra Small 0.8 mm x 0.8 mm Outline Ultra Thin 0.357 mm Height Typical ESD Protection 2000 V (HBM) Material categorization: For definitions of compliance please see www.vishay.
Si8810EDB Datasheet
