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Si8816EDB
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) Max.
0.109 at VGS = 10 V
30 0.116 at VGS = 4.5 V 0.123 at VGS = 3.7 V
0.142 at VGS = 2.5 V
ID (A) a 2.3 2.3 2.2 2.0
Qg (Typ.) 2.4 nC
MICRO FOOT® 0.8 x 0.8 S
S2
xxxxx 3
1 0.8 mm
1 4G D
Backside View
Bump Side View
0.8 mm
Marking Code: xx = AH xxx = Date/Lot traceability code
Ordering Information: Si8816EDB-T2-E1 (lead (Pb)-free and halogen-free)
FEATURES • TrenchFET® power MOSFET
• Ultra small 0.8 mm x 0.8 mm outline
• Ultra thin 0.4 mm max. height
• Typical ESD protection 1700 V (HBM)
• Material categorization: for definitions of compliance please see www.vishay.
SI8816EDB Datasheet
