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New Product
Si8812DB
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) RDS(on) () Max. 0.059 at VGS = 4.5 V 20 0.061 at VGS = 3.7 V 0.065 at VGS = 2.5 V 0.085 at VGS = 1.8 V
MICRO FOOT
Bump Side View Backside View
ID (A)a 3.2 3.1 3.0 2.7
Qg (Typ.)
6.3 nC
• • • • •
TrenchFET® Power MOSFET Small 0.8 mm x 0.8 mm Outline Area Low 0.4 mm max. profile Low On-Resistance Material categorization: For definitions of compliance please see www.vishay.
Si8812DB Datasheet
