SIE882DF - N-channel MOSFET

Vishay

Datasheet Details

Part number	SIE882DF
Manufacturer	Vishay
File Size	202.61 KB
Description	N-channel MOSFET
Datasheet	SIE882DF Datasheet

Overview

New Product N-Channel 25-V (D-S) MOSFET SiE882DF Vishay Siliconix PRODUCT SUMMARY ID (A)a VDS (V) RDS(on) (Ω) Silicon Package Limit Limit Qg (Typ.) 0.0014 at VGS = 10 V 229 25 0.0018 at VGS = 4.5 V 202 60 46 nC 60 Package Drawing www.vishay.com/doc?

Key Features

Halogen-free According to IEC 61249-2-21 Definition.
TrenchFET® Gen III Power MOSFET.
Ultra Low Thermal Resistance Using Top-Exposed PolarPAK® Package for Double-Sided Cooling.
Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size, ≤ 100 V.
Low Qgd/Qgs Ratio Helps Prevent Shoot-Through.
100 % Rg and UIS Tested.
Compliant to RoHS Directive 2002/95/EC.

More Datasheets from Vishay

Part Number	Description
SIE818DF	N-Channel 75-V (D-S) MOSFET
SiE822DF	N-Channel MOSFET
SiE854DF	N-Channel 100-V (D-S) MOSFET
SIE860DF	N-Channel 30-V (D-S) MOSFET
SIE862DF	N-Channel 30-V (D-S) MOSFET
SIE868DF	N-Channel 40-V (D-S) MOSFET
SIE878DF	N-channel MOSFET
SiEH4800EW	N-Channel MOSFET