SIHLD110 Datasheet (Power MOSFET)

Part: SIHLD110
Manufacturer: Vishay (official site)
Size: 1.21 MB

SIHLD110 Key Features

Dynamic dV/dt Rating
Repetitive Avalanche Rated
For Automatic Insertion
End Stackable
Logic-Level Gate Drive
RDS(on) Specified at VGS = 4 V and 5 V
175 °C Operating Temperature
Material categorization: For definitions of pliance please see .vishay./doc?99912
Lead (Pb)-containing terminations are not RoHS-pliant

Related Vishay Datasheets

Part Number	Description
SIHLD120	Power MOSFET
SIHLD014	Power MOSFET
SIHLD024	Power MOSFET
SiHL510S	Power MOSFET
SiHL520	Power MOSFET

SIHLD110 Description

Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple binations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1.