Description
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Features
- Dynamic dV/dt Rating.
- Repetitive Avalanche Rated.
- For Automatic Insertion.
- End Stackable.
- Logic-Level Gate Drive.
- RDS(on) Specified at VGS = 4 V and 5 V.
- 175 °C Operating Temperature.
- Material categorization: For definitions of compliance please see www. vishay. com/doc?99912
Note.
- Lead (Pb)-containing terminations are not RoHS-compliant. Exemptions may apply.
SIHLD110-Vishay.pdf
