Datasheet Summary
IRLD014, SiHLD014
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5 V 8.4 2.6 6.4 Single
Features
60 0.20
- Dynamic dV/dt Rating
- For Automatic Insertion
- End Stackable
- Logic-Level Gate Drive
- RDS(on) Specified at VGS = 4 V and 5 V
- 175 °C Operating Temperature
- Fast Switching
- pliant to RoHS Directive 2002/95/EC
Available
RoHS-
PLIANT
HVMDIP
DESCRIPTION
G S D S N-Channel MOSFET G
Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost...