Datasheet Summary
.vishay.
IRLD110, SiHLD110
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
100 VGS = 5.0 V
6.1 2.6 3.3 Single
HVMDIP
S N-Channel MOSFET
Features
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- For Automatic Insertion
- End Stackable
- Logic-Level Gate Drive
- RDS(on) Specified at VGS = 4 V and 5 V
- 175 °C Operating Temperature
- Material categorization: For definitions of pliance please see .vishay./doc?99912
Note
- Lead (Pb)-containing terminations are not RoHS-pliant.
Exemptions may apply.
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the...