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Power MOSFET
IRL520, SiHL520
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC)
100 VGS = 5.0 V
12
Qgs (nC)
3.0
Qgd (nC)
7.1
Configuration
Single
D
TO-220AB
0.27
S D G
G
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
SiHL520 Datasheet
