SiHL530 Description
G G D S S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best bi nation of fast swi tching, ruggedized device design, low on -resistance a nd cost effectiveness. The TO-220AB package is univers ally preferred for all mercial-industrial app lications at powe r dissipation levels to approximately 50 W. The low and low package c ost of th e TO- 220AB con tribute to its wide...
SiHL530 Key Features
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Logic-Level Gate Drive -R DS(on) Specified at VGS = 4 V and 5 V
- 175 °C Operating Temperature -F ast Switching
- Ease of Paralleling
- pliant to RoHS Directive 2002/95/EC