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SIHL530S Datasheet Power MOSFET

Manufacturer: Vishay

Overview: Power MOSFET IRL530S, SiHL530S Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 100 VGS = 5.0 V 28 Qgs (nC) 3.8 Qgd (nC) 14 Configuration Single 0.16 D2PAK (TO-263) D GD S G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation.

General Description

Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The D2PAK (TO-263) is a surface mount power package capable of acmodating die sizes up to HEX-4.

It provides the highest power capability and the lowest possible on resistance in any existing surface mount package.

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • Surface Mount.
  • Available in Tape and Reel.
  • Dynamic dV/dt Rating.
  • Repetitive Avalanche Rated.
  • Logic Level Gate Drive.
  • RDS(on) Specified at VGS = 4 V and 5 V.
  • 175 °C Operating Temperature.
  • Compliant to RoHS Directive 2002/95/EC.

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