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SIHLI540G Datasheet Power MOSFET

Manufacturer: Vishay

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General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.

The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink.

Overview

Power MOSFET IRLI540G, SiHLI540G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 5 V 64 9.4 27 Single 0.

Key Features

  • Isolated Package.
  • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz).
  • Sink to Lead Creepage Distance = 4.8 mm.
  • Logic-Level Gate Drive.
  • RDS (on) Specified at VGS = 4 V and 5 V.
  • Fast Switching.
  • Ease of Paralleling.
  • Compliant to RoHS Directive 2002/95/EC.

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