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SIR770DP - N-Channel MOSFET

Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFET.
  • 100 % Rg and UIS Tested.
  • Compliant to RoHS Directive 2002/95/EC.

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Datasheet Details

Part number SIR770DP
Manufacturer Vishay
File Size 341.02 KB
Description N-Channel MOSFET
Datasheet download datasheet SIR770DP Datasheet

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Full PDF Text Transcription

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SiR770DP Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS RDS(on) () Channel-1 30 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V Channel-2 30 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V ID (A)a, f 8.0 8.0 8.0 8.0 Qg (Typ.) 6.6 6.6 SCHOTTKY PRODUCT SUMMARY VDS (V) 30 VSD (V) Diode Forward Voltage 0.50 V at 1.0 A IF (A)a 4.0 PowerPAK SO-8 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Fixed Telecom - Server • Synchronous Converter 6.15 mm S1 1 G1 2 5.
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