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SIS780DN - N-Channel 30V MOSFET

Features

  • SkyFET® monolithic TrenchFET® Gen III power MOSFET and Schottky diode.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SIS780DN
Manufacturer Vishay
File Size 562.50 KB
Description N-Channel 30V MOSFET
Datasheet download datasheet SIS780DN Datasheet

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Full PDF Text Transcription

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www.vishay.com SiS780DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode PowerPAK® 1212-8 Single D D8 D7 D6 5 3.3 mm 1 Top View 3.3 mm PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration 1 2S 3S 4S G Bottom View 30 0.0135 0.0175 7.3 18 Single plus integrated Schottky (SkyFET) FEATURES • SkyFET® monolithic TrenchFET® Gen III power MOSFET and Schottky diode • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.
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