Download SUP50020EL Datasheet PDF
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SUP50020EL Key Features

  • TrenchFET® power MOSFET
  • Maximum 175 °C junction temperature
  • Qgd/Qgs ratio < 0.25
  • Operable with logic-level gate drive
  • 100 % Rg and UIS tested
  • Material categorization: for definitions of pliance

SUP50020EL Description

SUP50020EL Vishay Siliconix N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) MAX. 0.0023 at VGS = 10 V 60 0.0028 at VGS = 4.5 V ID (A) d 120 120 Qg (TYP.) 126 nC TO-220AB Top View S D G Ordering Information: SUP50020EL-GE3 (lead (Pb)-free and halogen-free).