Si2312CDS Description
New Product Si2312CDS Vishay Siliconix N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0318 at VGS = 4.5 V 20 0.0356 at VGS = 2.5 V 0.0414 at VGS = 1.8 V ID (A)e 6a 6a 5.6 8.8 nC Qg.
Si2312CDS Key Features
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Power MOSFET
- 100 % Rg Tested
- pliant to RoHS Directive 2002/95/EC