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P-Channel 30-V (D-S) MOSFET
Si9435DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
–30
rDS(on) (W)
0.055 @ VGS = –10 V 0.07 @ VGS = –6 V
0.105 @ VGS = –4.5 V
S1 S2 S3 G4
SO-8 Top View
8D 7D 6D 5D
ID (A)
"5.1 "4.6 "3.6
SSS
G
DDDD P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C TA = 70_C
TA = 25_C TA = 70_C
VDS VGS ID IDM
IS PD TJ, Tstg
–30 "20 "5.1 "4.6 "20 –2.6 2.5 1.6 –55 to 150
Unit
V
A
W _C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
RthJA
Notes a.
Si9435DY Datasheet
