* Fast body diode MOSFET using E series technology
* Reduced trr, Qrr, and IRRM
* Low figure-of-merit (FOM): Ron x Qg
* Low input capacitance (Ciss)
* Increased robustness due to low Qrr
* Ultra low gate charge (Qg)
* Avalanche energy rated (UI
SiHP21N60EF Datasheet (290.07 KB)
SiHP21N60EF
290.07 KB
Power mosfet.
www.vishay.com SiHP21N60EF Vishay Siliconix EF Series Power MOSFET with Fast Body Diode PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C (.
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