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SiSS12DN - N-Channel MOSFET

Features

  • TrenchFET® Gen IV power MOSFET.
  • Very low RDS(on) in a compact and thermally enhanced package.
  • Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiSS12DN
Manufacturer Vishay
File Size 308.11 KB
Description N-Channel MOSFET
Datasheet download datasheet SiSS12DN Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com SiSS12DN Vishay Siliconix N-Channel 40 V (D-S) MOSFET PowerPAK® 1212-8S D D D 6 D 7 8 5 3.3 mm 1 Top View 3.3 mm PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 4 3 S 2 S S G Bottom View 40 0.00198 0.00274 28.7 60 a, g Single FEATURES • TrenchFET® Gen IV power MOSFET • Very low RDS(on) in a compact and thermally enhanced package • Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.
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