SiSS12DN
Key Features
- TrenchFET® Gen IV power MOSFET
- Very low RDS(on) in a pact and thermally enhanced package
- Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance please see .vishay./doc?99912
