SiZ322DT Description
() at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a, d Configuration 25 0.00635 0.00900 6.2 30 Dual ORDERING INFORMATION Package Lead (Pb)-free and halogen-free.
SiZ322DT Key Features
- TrenchFET® Gen IV power MOSFET
- High side and low side MOSFETs form optimized bination for 50 % duty cycle
- Optimized RDS
- Qg and RDS
- Qgd FOM elevates efficiency for high frequency switching
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance