900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Vishay Intertechnology Electronic Components Datasheet

SiZ322DT Datasheet

Dual N-Channel 25V (D-S) MOSFET

No Preview Available !

www.vishay.com
SiZ322DT
Vishay Siliconix
Dual N-Channel 25 V (D-S) MOSFET
PowerPAIR® 3 x 3 G2
S2 8
S2 7
S2 6
5 S1/D2
(Pin 9)
3 mm 1 3 mm
Top View
D1
1
4
3
2 G1
D1
D1
D1
Bottom View
PRODUCT SUMMARY
MOSFET CHANNEL-1 AND CHANNEL-2
VDS (V)
RDS(on) max. () at VGS = 10 V
RDS(on) max. () at VGS = 4.5 V
Qg typ. (nC)
ID (A) a, d
Configuration
25
0.00635
0.00900
6.2
30
Dual
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
FEATURES
• TrenchFET® Gen IV power MOSFET
• High side and low side MOSFETs form optimized
combination for 50 % duty cycle
• Optimized RDS - Qg and RDS - Qgd FOM elevates
efficiency for high frequency switching
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Synchronous buck
• DC/DC conversion
• Half bridge
• POL
D1
G1
N-Channel 1
MOSFET
S1/D2
PowerPAIR 3 x 3
SiZ322DT-T1-GE3
G2
N-Channel 2
MOSFET
S2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
CHANNEL-1 AND CHANNEL-2
SYMBOL
LIMIT
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C)
Pulsed drain current (t = 100 μs)
Continuous source current (MOSFET diode conduction)
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
25
+16 / -12
30 a
30 a
19 b, c
15.2 b, c
100
13.9
3.1 b, c
15
11.25
16.7
10.7
3.7 b, c
2.4 b, c
-55 to +150
260
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. TC = 25 °C
UNIT
V
A
mJ
W
°C
S17-0248-Rev. A, 20-Feb-17
1
Document Number: 79370
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

SiZ322DT Datasheet

Dual N-Channel 25V (D-S) MOSFET

No Preview Available !

www.vishay.com
SiZ322DT
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient a, b
Maximum junction-to-case (drain)
Notes
a. Surface mounted on 1" x 1" FR4 board
b. Maximum under steady state conditions is 69 °C/W
t 10 s
Steady state
SYMBOL
RthJA
RthJC
CHANNEL-1 AND CHANNEL-2
TYPICAL
MAXIMUM
27 34
6 7.5
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
CHANNEL-1 AND CHANNEL-2
TEST CONDITIONS
MIN.
TYP.
Static
Drain-source breakdown voltage
Gate-source threshold voltage
VDS
VGS(th)
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
25 -
1-
Gate-source leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward transconductance a
Dynamic b
IGSS
IDSS
ID(on)
RDS(on)
gfs
VDS = 0 V, VGS = +16 V / -12 V
VDS = 25 V, VGS = 0 V
VDS = 25 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
VGS = 10 V, ID = 15 A
VGS = 4.5 V, ID = 10 A
VDS = 10 V, ID = 15 A
--
--
--
40 -
- 0.00529
- 0.00750
- 57
Input capacitance
Output capacitance
Reverse transfer capacitance
Crss/Ciss ratio
Total gate charge
Ciss
Coss
Crss
Qg
VDS = 12.5 V, VGS = 0 V, f = 1 MHz
VDS = 12.5 V, VGS = 10 V, ID = 19 A
-
-
-
-
-
-
950
275
50
0.053
13.4
6.2
Gate-source charge
Gate-drain charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
VDS = 12.5 V, VGS = 4.5 V, ID = 19 A
f = 1 MHz
VDD = 12.5 V, RL = 0.8 , ID 15.2 A,
VGEN = 10 V, Rg = 1
VDD = 12.5 V, RL = 0.8 , ID 15.2 A,
VGEN = 4.5 V, Rg = 1
-
-
0.2
-
-
-
-
-
-
-
-
2.7
1.1
0.8
10
25
15
15
15
45
20
25
MAX.
-
2.4
± 100
1
5
-
0.00635
0.00900
-
-
-
-
0.106
20.1
9.3
-
-
1.6
20
50
30
30
30
70
40
50
UNIT
V
nA
μA
A
S
pF
nC
ns
S17-0248-Rev. A, 20-Feb-17
2
Document Number: 79370
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number SiZ322DT
Description Dual N-Channel 25V (D-S) MOSFET
Maker Vishay
Total Page 8 Pages
PDF Download

SiZ322DT Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 SiZ322DT Dual N-Channel 25V (D-S) MOSFET
Vishay





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy