SiZ342DDT Datasheet | Vishay

FEATURES - Trench FET® Gen IV power MOSFET - High side and low side MOSFETs form optimized bination for 50 % duty cycle - Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency for high frequency switching - 100 % Rg and UIS tested - Material categorization: for definitions of pliance please see .vishay./doc?99912 APPLICATIONS - Synchronous buck - DC/DC conversion - Half bridge - POL D1 G1 N-Channel 1 MOSFET S1/D2 Power PAIR 3 x 3 Si Z342DDT-T1-GE3 G2 N-Channel 2 MOSFET S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current (t = 100 μs) Continuous source current (MOSFET diode conduction) Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation Operating junction and storage temperature range Soldering remendations (peak temperature) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 m H TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS IDM IS IAS EAS TJ, Tstg Notes a. TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 10 s LIMIT 30 +20 / -16 33.6...