Full PDF Text Transcription for SiZF300DT (Reference)
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www.vishay.com SiZF300DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode PowerPAIR® 3 x 3F D1 S2 3.3 mm 1 3.3 mm Top View PRODUCT SUMMARY VDS (V) RD...
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PAIR® 3 x 3F D1 S2 3.3 mm 1 3.3 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration 1 4 G2 3 S1/D2 2 S1/D2 G1 Bottom View CHANNEL-1 CHANNEL-2 30 30 0.00450 0.00184 0.00700 0.00257 6.9 19.4 75 141 Dual FEATURES • TrenchFET® Gen IV power MOSFET • SkyFET® low side MOSFET with integrated Schottky • 100 % Rg and UIS tested • Internally connected half-bridge configuration in 3.3 mm-by-3.3 mm footprint • Material categorization: for definitions of compliance please see www.vishay.
SiZF300DT Datasheet
