Datasheet Summary
.vishay.
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET
3.3 mm
PowerPAIR® 3 x 3FS
V+
V+ LSG 3
GND 2
V+
1 3.3 mm Top View
12 11
7 8 HSG 9 SW 10 SW SW
Bottom View
PRODUCT SUMMARY
VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration
30 0.0032 0.0053
6.7 100 a Dual
Features
- TrenchFET® Gen V power MOSFET
- Symmetric dual N-channel
- Flip chip technology optimal thermal design
- High side and low side MOSFETs form optimized bination for 50 % duty cycle
- Optimized RDS
- Qg and RDS
- Qgd FOM elevates efficiency for high frequency switching
- 100 % Rg and UIS tested
- Material categorization:...