V10PM6 Datasheet Trench Mos Barrier Schottky Rectifier

Manufacturer: Vishay

Overview: www.vishay.com V10PM6 Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.39 V at IF = 5 A eSMP® Series K 1 2 SMPC (TO-277A) K Cathode Anode 1 Anode 2 DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) 10.0 A VRRM 60 V IFSM VF at IF = 10.0 A (TA = 125 °C) 180 A 0.52 V TJ max.

Datasheet Details

Part number	V10PM6
Manufacturer	Vishay
File Size	102.44 KB
Description	Trench MOS Barrier Schottky Rectifier
Datasheet	V10PM6-Vishay.pdf

Key Features

Very low profile - typical height of 1.1 mm Available.
Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified available - Automotive ordering code; base P/NHM3.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

V10PM6 Distributor & Price

Compare V10PM6 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.

More Datasheets from Vishay

Part Number	Description
V10PM10	Trench MOS Barrier Schottky Rectifier
V10PM12	Trench MOS Barrier Schottky Rectifier
V10PM12-M3	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V10PM12HM3	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V10PM15	Trench MOS Barrier Schottky Rectifier
V10PM45	Trench MOS Barrier Schottky Rectifier
V10P10	Trench MOS Barrier Schottky Rectifier
V10P12	Trench MOS Barrier Schottky Rectifier
V10P15	Trench MOS Barrier Schottky Rectifier
V10P20	Trench MOS Barrier Schottky Rectifier