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Vishay Intertechnology Electronic Components Datasheet

V20150C-E3 Datasheet

Dual High Voltage Trench MOS Barrier Schottky Rectifier

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V20150C-E3, VF20150C-E3, VB20150C-E3, VI20150C-E3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.59 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V20150C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
123
VF20150C
PIN 1
PIN 2
PIN 3
TO-262AA
K
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA
package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
2
1
VB20150C
PIN 1
K
PIN 2
HEATSINK
3
2
1
VI20150C
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 10 A
TJ max.
Package
2 x 10 A
150 V
120 A
0.69 V
150 °C
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Diode variations
Dual common cathode
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB, and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V20150C
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
Non-repetitive avalanche energy
at TJ = 25 °C, L = 60 mH per diode
Peak repetitive reverse current at tp = 2 μs, 1 kHz,
TJ = 38 °C ± 2 °C per diode
Voltage rate of change (rated VR)
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
EAS
IRRM
dV/dt
VAC
Operating junction and storage temperature range
TJ, TSTG
VF20150C VB20150C
150
20
10
120
70
0.5
10 000
1500
-55 to +150
VI20150C
UNIT
V
A
A
mJ
A
V/μs
V
°C
Revision: 13-Dec-16
1 Document Number: 89046
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

V20150C-E3 Datasheet

Dual High Voltage Trench MOS Barrier Schottky Rectifier

No Preview Available !

V20150C-E3, VF20150C-E3, VB20150C-E3, VI20150C-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage
per diode (1)
Reverse current per diode (2)
IR = 1.0 mA
IF = 5 A
IF = 10 A
IF = 5 A
IF = 10 A
VR = 100 V
VR = 150 V
TA = 25 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VBR 150 (minimum)
0.79
1.05
VF 0.59
0.69
1.3
1.2
IR -
3
Notes
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
MAX.
-
-
1.20
-
0.75
-
-
150
15
UNIT
V
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20150C
VF20150C
Typical thermal resistance per diode
RJC
2.8
5.0
VB20150C
2.8
VI20150C
2.8
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
V20150C-E3/4W
1.88
ITO-220AB
VF20150C-E3/4W
1.75
TO-263AB
VB20150C-E3/4W
1.39
TO-263AB
VB20150C-E3/8W
1.39
TO-262AA
VI20150C-E3/4W
1.45
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
25
Resistive or Inductive Load
20
15 VF20150C
V(B,I)20150C
10
5
Mounted on Specific Heatsink
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
10
D = 0.8
D = 0.5
8 D = 0.3
D = 0.2
6
D = 0.1
4
D = 1.0
T
2
D = tp/T
tp
0
0 2 4 6 8 10 12
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 13-Dec-16
2 Document Number: 89046
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number V20150C-E3
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Maker Vishay
Total Page 6 Pages
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