V40DL45BP rectifier equivalent, trench mos barrier schottky rectifier.
* Trench MOS Schottky technology
* Very low profile - typical height of 1.7 mm
* Ideal for automated placement
* Low forward voltage drop, low power losse.
For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
MECH.
Image gallery