V60120C Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Low thermal resistance
- Meets MSL level 1, per J-STD-020
- Material categorization: for definitions of pliance
- Part: V60120C
- Manufacturer: Vishay
- Size: 150.11 KB
Related Vishay Datasheets
| Part Number | Description |
|---|---|
| V60100C-M3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier |
| V60100P | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| V60100PW | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| V60170G-M3 | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| V60170PW | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |