V60120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Datasheet Details

Part number	V60120C
Manufacturer	Vishay
File Size	150.11 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V60120C_Vishay.pdf

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Low thermal resistance.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB package).
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📁 V60120C Similar Datasheet

V60100C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
V600 - RFID System Applications (Omron)
V600-HA - Intelligent Flag I/II (Omron)
V600-HAM81 - Intelligent Flag I/II (Omron)
V600-HAM91 - Intelligent Flag I/II (Omron)
V600-HAR81 - Intelligent Flag I/II (Omron)
V600-HAR82 - Intelligent Flag I/II (Omron)
V600-HAR91 - Intelligent Flag I/II (Omron)

Other Datasheets by Vishay

Published: Feb 2, 2012 |