V60170G-M3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Key Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Solder dip 275 °C max. 10 s, per JESD 22-B106.
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

V60170G-M3 dual high-voltage trench mos barrier schottky rectifier by Vishay - Datasheet Preview

Datasheet Details

Part number	V60170G-M3
Manufacturer	Vishay
File Size	123.56 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V60170G-M3 Datasheet

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www.vishay.com V60170G-M3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TMBS ® TO-220AB V60170G 3 2 1 PIN 1 PIN 2 PIN 3 CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Package 2 x 30 A 170 V 210 A 0.72 V 175 °C TO-220AB Diode variation Dual common cathode FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.