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V60120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Vishay

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V60120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier by Vishay - Datasheet Preview — Datasheet preview – V60120C

Datasheet Details

Part number	V60120C
Manufacturer	Vishay
File Size	150.11 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V60120C Datasheet
Additional preview pages of the V60120C datasheet.

Product details

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Low thermal resistance.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB package).
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Published: Feb 2, 2012 |