V60170G-M3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Datasheet Details

Part number	V60170G-M3
Manufacturer	Vishay
File Size	123.56 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V60170G-M3-Vishay.pdf

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Solder dip 275 °C max. 10 s, per JESD 22-B106.
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

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Published: Apr 18, 2016 |