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New Product
V60200PGW
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.54 V at IF = 5 A
FEATURES
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition
TO-3PW
PIN 1 PIN 3 PIN 2 CASE
TMBS®
TYPICAL APPLICATIONS
For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM EAS at L = 60 mH VF at IF = 30 A TJ max. 2 x 30 A 200 V 300 A 150 mJ 0.
V60200PGW Datasheet
