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V60200PGW - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

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Datasheet Details

Part number	V60200PGW
Manufacturer	Vishay
File Size	141.15 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V60200PGW_Vishay.pdf

V60200PGW Product details

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Solder dip 275 °C max. 10 s, per JESD 22-B106.
Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC.
Halogen-free according to IEC 61249-2-21 definition TO-3PW PIN 1 PIN 3 PIN 2 CASE TMBS®.

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Published: Feb 2, 2012 |