V60M120C-M3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Solder dip 275 °C max. 10 s, per JESD 22-B106.
AEC-Q101 qualified.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Vishay

Datasheet Details

Part number	V60M120C-M3
Manufacturer	Vishay
File Size	123.89 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V60M120C-M3 Datasheet
Additional preview pages of the V60M120C-M3 datasheet.

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Full PDF Text Transcription

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www.vishay.com V60M120C-M3, V60M120CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A TMBS ® TO-220AB V60M120C 3 2 1 PIN 1 PIN 2 PIN 3 CASE FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A (TA = 125 °C) TJ max. Package 2 x 30 A 120 V 300 A 0.

Published: Aug 22, 2017 |