Datasheet Details
| Part number | VB20120SG |
|---|---|
| Manufacturer | Vishay |
| File Size | 218.06 KB |
| Description | High-Voltage Trench MOS Barrier Schottky Rectifier |
| Datasheet |
 VB20120SG Datasheet
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Features
- Trench MOS Schottky technology.
- Low forward voltage drop, low power losses.
- High efficiency operation.
- Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 2 V20120SG PIN 1 PIN 2 CASE 3 1 VF20120SG PIN 1 PIN 2 2 3 1.
- Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package).
- Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPI.