• Part: VB20120C
  • Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier
  • Manufacturer: Vishay
  • Size: 220.33 KB
VB20120C Datasheet (PDF) Download
Vishay
VB20120C

Key Features

  • Trench MOS Schottky technology
  • Low forward voltage drop, low power losses
  • High efficiency operation
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
  • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package)