• Part: VB20120C-E3
  • Description: Dual High Voltage Trench MOS Barrier Schottky Rectifier
  • Manufacturer: Vishay
  • Size: 204.14 KB
VB20120C-E3 Datasheet (PDF) Download
Vishay
VB20120C-E3

Key Features

  • Trench MOS Schottky technology
  • Low forward voltage drop, low power losses
  • High efficiency operation
  • Low - Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
  • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package)