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VB20120SG-E3 Datasheet High Voltage Trench MOS Barrier Schottky Rectifier

Manufacturer: Vishay

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Overview

V20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V20120SG 3 2 1 PIN 1 PIN 2 PIN 3 CASE D2PAK (TO-263AB) K VF20120SG 1 2 3 PIN 1 PIN 2 PIN 3 TO-262AA K A NC VB20120SG NC K A HEATSINK DESIGN SUPPORT TOOLS 3 2 VI20120SG 1 PIN 1 PIN 2 PIN 3 K click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max.

Package 20 A 120 V 150 A 0.

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
  • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package).
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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