VB20120SG-M3 Datasheet | Vishay

.vishay. Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A TMBS ® D2PAK (TO-263AB) K A NC VB20120SG NC K A HEATSINK DESIGN SUPPORT TOOLS click logo to get started Features - Trench MOS Schottky technology - Low forward voltage drop, low power losses - High efficiency operation - Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C - Material categorization: for definitions of pliance please see .vishay./doc?99912 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. Package 20 A 120 V 150 A 0.78 V 150 °C D2PAK (TO-263AB) Circuit configuration Single MECHANICAL DATA Case: D2PAK (TO-263AB) Molding pound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, Ro HS-pliant, and mercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: as...