VB20120SG
Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package)
- Part: VB20120SG
- Description: High-Voltage Trench MOS Barrier Schottky Rectifier
- Manufacturer: Vishay
- Size: 218.06 KB