Datasheet4U.com

VB20120SG - High-Voltage Trench MOS Barrier Schottky Rectifier

Product Overview

Vishay

📥 Download Datasheet

VB20120SG High-Voltage Trench MOS Barrier Schottky Rectifier by Vishay - Datasheet Preview — Datasheet preview – VB20120SG

Datasheet Details

Part number	VB20120SG
Manufacturer	Vishay
File Size	218.06 KB
Description	High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VB20120SG Datasheet
Additional preview pages of the VB20120SG datasheet.

Product details

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 2 V20120SG PIN 1 PIN 2 CASE 3 1 VF20120SG PIN 1 PIN 2 2 3 1.
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package).
Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPI.

📁 Similar Datasheet

VB2101K - P-Channel MOSFET (VBsemi)
VB2120 - P-Channel MOSFET (VBsemi)
VB2212N - P-Channel MOSFET (VBsemi)
VB2290 - P-Channel MOSFET (VBsemi)
VB2355 - P-Channel MOSFET (VBsemi)
VB2405D-1W - DC-DC CONVERTER (YUAN)
VB2405D-2W - DC-DC CONVERTER (YUAN)
VB2405S-1W - DC-DC CONVERTER (YUAN)

Other Datasheets by Vishay

VB20120SG-E3 - High Voltage Trench MOS Barrier Schottky Rectifier
VB20120SG-M3 - High-Voltage Trench MOS Barrier Schottky Rectifier
VB20120S - High-Voltage Trench MOS Barrier Schottky Rectifier
VB20120S-E3 - High Voltage Trench MOS Barrier Schottky Rectifier
VB20120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VB20120C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Published: Feb 2, 2012 |