VB20120C-M3 Description
.vishay. VB20120C-M3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A TMBS ® D2PAK (TO-263AB) K 2 1 VB20120C PIN 1 K PIN 2 HEATSINK DESIGN SUPPORT TOOLS click logo to get.
VB20120C-M3 Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum
- Material categorization: for definitions of pliance