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VB20M120C-E3, VB20M120C-M3, VB20M120CHM3
www.vishay.com
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.55 V at IF = 5 A
TMBS ®
TO-263AB
K
2
1
VB20M120C
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
2 x 10 A
VRRM IFSM VF at IF = 10 A
120 V 120 A 0.64 V
TJ max.
150 °C
Package
TO-263AB
Diode variation
Common cathode
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation • AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
• Material categorization: for definitions of compliance please see www.vishay.
VB20M120CHM3 Datasheet
