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VB30100S-M3
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.39 V at IF = 5 A
TMBS ®
D2PAK (TO-263AB)
K
A NC VB30100S
NC K
A HEATSINK
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Package
30 A 100 V 250 A 0.69 V 150 °C D2PAK (TO-263AB)
Circuit configuration
Common cathode
FEATURES
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C • Material categorization: for definitions of compliance
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VB30100S-M3 Datasheet
