* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Low thermal resistance
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
* Material categorization: for definitions of compliance pl
VB30100S-M3 Datasheet (94.09 KB)
VB30100S-M3
94.09 KB
High-voltage trench mos barrier schottky rectifier.
www.vishay.com VB30100S-M3 Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A TMBS ®.
📁 Related Datasheet
VB30100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB30100S High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB30100SG High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB30100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB30100C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB30100CHM3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB30120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB30120C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB30120S High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB30120SG High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
