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VB30100S - High-Voltage Trench MOS Barrier Schottky Rectifier

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Datasheet Details

Part number VB30100S
Manufacturer Vishay
File Size 226.53 KB
Description High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VB30100S Datasheet

Overview

www.DataSheet.co.kr New Product V30100S, VF30100S, VB30100S & VI30100S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Low thermal resistance 2 V30100S PIN 1 PIN 2 CASE 3 1 VF30100S PIN 1 PIN 2 2 3 1.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
  • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB, and TO-262AA package).
  • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC.

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