Datasheet4U Logo Datasheet4U.com

VB30100S - High-Voltage Trench MOS Barrier Schottky Rectifier

Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Low thermal resistance 2 V30100S PIN 1 PIN 2 CASE 3 1 VF30100S PIN 1 PIN 2 2 3 1.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
  • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB, and TO-262AA package).
  • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC.

📥 Download Datasheet

Datasheet preview – VB30100S

Datasheet Details

Part number VB30100S
Manufacturer Vishay
File Size 226.53 KB
Description High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VB30100S Datasheet
Additional preview pages of the VB30100S datasheet.

📁 Similar Datasheet

  • VB3102M - Dual N-Channel MOSFET (VBsemi)
  • VB325SP - HIGH VOLTAGE IGNITION COIL DRIVER POWER IC (STMicroelectronics)
  • VB3407A - P-Channel MOSFET (VBsemi)
Other Datasheets by Vishay
  • VB30100S-E3 - High Voltage Trench MOS Barrier Schottky Rectifier
  • VB30100S-M3 - High-Voltage Trench MOS Barrier Schottky Rectifier
  • VB30100SG - High-Voltage Trench MOS Barrier Schottky Rectifier
  • VB30100C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
  • VB30100C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier
  • VB30100CHM3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
  • VB30120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
  • VB30120C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Full PDF Text Transcription

Click to expand full text
www.DataSheet.co.kr New Product V30100S, VF30100S, VB30100S & VI30100S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
Published: |